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2N4264 PDF预览

2N4264

更新时间: 2024-11-06 22:45:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 173K
描述
General Purpose Transistor(NPN Silicon)

2N4264 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:PLASTIC, TO-226AA, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.11
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:15 V
配置:Single最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
JESD-609代码:e0端子数量:3
最高工作温度:135 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.31 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

2N4264 数据手册

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Order this document  
by 2N4264/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
15  
Unit  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
30  
6.0  
Vdc  
Collector Current — Continuous  
I
C
200  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
V
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
15  
30  
C
B
CollectorBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
6.0  
E
C
Base Cutoff Current  
I
µAdc  
BEV  
(V  
CE  
(V  
CE  
= 12 Vdc, V  
= 12 Vdc, V  
= 0.25 Vdc)  
= 0.25 Vdc, T = 100°C)  
0.1  
10  
EB(off)  
EB(off)  
A
Collector Cutoff Current  
I
nAdc  
CEX  
(V  
CE  
= 12 Vdc, V  
= 0.25 Vdc)  
100  
EB(off)  
REV 2  
Motorola, Inc. 1997  

2N4264 替代型号

型号 品牌 替代类型 描述 数据表
2N4264LEADFREE CENTRAL

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2N4264/D ONSEMI

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2N4264-18FLEADFREE CENTRAL

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Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N4264-18R CENTRAL

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Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
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Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N4264-5T CENTRAL

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Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T, 3
2N4264APMLEADFREE CENTRAL

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Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N4264LEADFREE CENTRAL

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暂无描述
2N4264RL MOTOROLA

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200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4264RL1 MOTOROLA

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Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2N4264RLRA MOTOROLA

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200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92