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2N4261_1

更新时间: 2024-11-24 07:28:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
5页 192K
描述
PNP SMALL SIGNAL SILICON TRANSISTOR

2N4261_1 数据手册

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PNP SMALL SIGNAL SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/511  
DEVICES  
LEVELS  
2N4261  
2N4261UB  
2N4261UBC *  
JAN  
JANTX  
JANTXV  
JANS  
* Available for JANS only  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
W
15  
Collector-Base Voltage  
15  
4.5  
Emitter-Base Voltage  
TO-72  
2N4261  
Collector Current  
30  
Total Power Dissipation @ TA = +25°C  
Operating & Storage Junction Temperature Range  
PT  
0.2  
Top, Tstg  
-65 to +200  
°C  
Note: Consult 19500/511 for Thermal Performance Curves.  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol Min. Max.  
Unit  
3 PIN  
2N4261UB  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
ICBO  
15  
Vdc  
Collector-Base Cutoff Current  
VCB = 15Vdc  
10  
10  
50  
5
μAdc  
μAdc  
ηAdc  
ηAdc  
Emitter-Base Cutoff Current  
IEBO  
V
EB = 4.5Vdc  
Collector-Emitter Cutoff Current  
CE = 10Vdc, VBE = 0.4Vdc  
Collector-Emitter Cutoff Current  
CE = 10Vdc, VBE = 2.0Vdc  
ICEX1  
ICEX2  
V
2N4261UBC  
(UBC = Ceramic Lid Version)  
V
T4-LDS-0150 Rev. 2 (101161)  
Page 1 of 5  

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