Datasheet > 2N4261UB_05

2N4261UB_05

更新时间： 2024-11-24 03:56:11

品牌	Logo	应用领域
SEMICOA		晶体晶体管
页数	文件大小	规格书
2页	89K
描述
Silicon PNP Transistor

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数据手册

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2N4261UB_05 数据手册

2N4261UB

Silicon PNP Transistor

Data Sheet

Description

Applications

• General purpose switching transistor

• Low power

• PNP silicon transistor

SEMICOA offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N4261UBJ)

• JANTX level (2N4261UBJX)

• JANTXV level (2N4261UBJV)

• JANS level (2N4261UBJS)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

Features

• Radiation testing (total dose) upon request

• Hermetically sealed Cersot ceramic

• Also available in chip configuration

• Chip geometry 0014

• Reference document:

MIL-PRF-19500/511

Benefits

• Qualification Levels: JAN, JANTX,

JANTXV and JANS

Please contact SEMICOA for special configurations

www.SEMICOA.com or (714) 979-1900

• Radiation testing available

T_C= 25°C unless otherwise specified

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Volts

Collector-Emitter Voltage

V_CEO

V_CBO

Collector-Base Voltage

Emitter-Base Voltage

Volts

V_EBO

I_C

4.5

Collector Current, Continuous

mW/°C

°C/mW

Power Dissipation, T_A= 25°C

Derate linearly above 25°C

200

1.14

P_T

Thermal Resistance

0.86

R_θJA

Operating Junction Temperature

Storage Temperature

T_J

T_STG

°C

-65 to +200

SEMICOA

Rev. E

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

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