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2N4261UBC PDF预览

2N4261UBC

更新时间: 2024-09-17 07:28:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
5页 192K
描述
PNP SMALL SIGNAL SILICON TRANSISTOR

2N4261UBC 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N3Reach Compliance Code:compliant
风险等级:5.68其他特性:HIGH RELIABILITY
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-CDSO-N3JESD-609代码:e4
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:YES
端子面层:GOLD OVER NICKEL端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON最大关闭时间(toff):3.5 ns
最大开启时间(吨):2.5 nsBase Number Matches:1

2N4261UBC 数据手册

 浏览型号2N4261UBC的Datasheet PDF文件第2页浏览型号2N4261UBC的Datasheet PDF文件第3页浏览型号2N4261UBC的Datasheet PDF文件第4页浏览型号2N4261UBC的Datasheet PDF文件第5页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PNP SMALL SIGNAL SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/511  
DEVICES  
LEVELS  
2N4261  
2N4261UB  
2N4261UBC *  
JAN  
JANTX  
JANTXV  
JANS  
* Available for JANS only  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
W
15  
Collector-Base Voltage  
15  
4.5  
Emitter-Base Voltage  
TO-72  
2N4261  
Collector Current  
30  
Total Power Dissipation @ TA = +25°C  
Operating & Storage Junction Temperature Range  
PT  
0.2  
Top, Tstg  
-65 to +200  
°C  
Note: Consult 19500/511 for Thermal Performance Curves.  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol Min. Max.  
Unit  
3 PIN  
2N4261UB  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
ICBO  
15  
Vdc  
Collector-Base Cutoff Current  
VCB = 15Vdc  
10  
10  
50  
5
μAdc  
μAdc  
ηAdc  
ηAdc  
Emitter-Base Cutoff Current  
IEBO  
V
EB = 4.5Vdc  
Collector-Emitter Cutoff Current  
CE = 10Vdc, VBE = 0.4Vdc  
Collector-Emitter Cutoff Current  
CE = 10Vdc, VBE = 2.0Vdc  
ICEX1  
ICEX2  
V
2N4261UBC  
(UBC = Ceramic Lid Version)  
V
T4-LDS-0150 Rev. 2 (101161)  
Page 1 of 5  

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