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2N4261 PDF预览

2N4261

更新时间: 2024-11-27 07:28:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
4页 152K
描述
PNP SMALL SIGNAL SILICON TRANSISTOR

2N4261 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5
最大集电极电流 (IC):0.03 A配置:Single
最小直流电流增益 (hFE):30JESD-609代码:e0
最高工作温度:200 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):2000 MHzBase Number Matches:1

2N4261 数据手册

 浏览型号2N4261的Datasheet PDF文件第2页浏览型号2N4261的Datasheet PDF文件第3页浏览型号2N4261的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
PNP SMALL SIGNAL SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/511  
DEVICES  
LEVELS  
2N4261  
2N4261UB  
JAN  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
15  
Vdc  
Vdc  
Vdc  
mAdc  
W
Collector-Base Voltage  
15  
4.5  
Emitter-Base Voltage  
Collector Current  
30  
Total Power Dissipation @ TA = +25°C  
Operating & Storage Junction Temperature Range  
PT  
0.2  
TO-72  
2N4261  
Top, Tstg  
-65 to +200  
°C  
Note: Consult 19500/511 for Thermal Performance Curves.  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERTICS  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
15  
Vdc  
Collector-Base Cutoff Current  
VCB = 15Vdc  
ICBO  
10  
10  
50  
5
μAdc  
μAdc  
ηAdc  
ηAdc  
3 PIN  
2N4261UB  
Emitter-Base Cutoff Current  
VEB = 4.5Vdc  
IEBO  
Collector-Emitter Cutoff Current  
ICEX1  
VCE = 10Vdc, VBE = 0.4Vdc  
Collector-Emitter Cutoff Current  
ICEX2  
VCE = 10Vdc, VBE = 2.0Vdc  
T4-LDS-0150 Rev. 1 (092064)  
Page 1 of 4  

2N4261 替代型号

型号 品牌 替代类型 描述 数据表
2N4261 SEMICOA

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