生命周期: | Obsolete | 零件包装代码: | TO-46 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.84 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 90 |
JEDEC-95代码: | TO-46 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | CHOPPER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N3913 | ETC | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | TO-18 |
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2N3914 | ETC | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | TO-18 |
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2N3915 | ETC | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-18 |
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2N3916 | ETC | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 150MA I(C) | TO-37VAR |
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2N3917 | MICROSEMI | Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL C |
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2N3918 | SEME-LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
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