5秒后页面跳转
2N3773 PDF预览

2N3773

更新时间: 2024-01-30 03:30:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管局域网
页数 文件大小 规格书
7页 86K
描述
High power NPN transistor

2N3773 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-3包装说明:LEAD FREE, CASE 1-07, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.67Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):16 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N3773 数据手册

 浏览型号2N3773的Datasheet PDF文件第1页浏览型号2N3773的Datasheet PDF文件第2页浏览型号2N3773的Datasheet PDF文件第4页浏览型号2N3773的Datasheet PDF文件第5页浏览型号2N3773的Datasheet PDF文件第6页浏览型号2N3773的Datasheet PDF文件第7页 
2N3773  
2
Electrical characteristics  
(T  
= 25 °C unless otherwise specified)  
case  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
Min.  
Typ. Max. Unit  
V
V
= 140 V  
Collector cut-off current  
2
mA  
mA  
CE  
CE  
I
CEV  
(V = -1.5 V)  
= 140 V T = 150 °C  
10  
BE  
C
Collector cut-off current  
I
V
V
V
= 120 V  
= 140 V  
= 7 V  
10  
2
mA  
mA  
mA  
CEO  
CBO  
EBO  
CE  
CB  
EB  
(I = 0)  
B
Collector cut-off current  
I
I
(I = 0)  
E
Emitter cut-off current  
5
(I = 0)  
C
Collector-emitter  
sustaining voltage  
(1)  
(1)  
(1)  
I = 0.2 A  
140  
160  
150  
V
V
V
V
C
CEO(sus)  
(I = 0)  
B
Collector-emitter  
sustaining voltage  
I = 0.1 A  
V
V
C
CEV(sus)  
CER(sus)  
(V = -1.5 V)  
BE  
Collector-emitter  
sustaining voltage  
I = 0.2 A  
C
(R = 100 Ω)  
BE  
I = 8 A  
I = 0.8 A  
B
1.4  
4
V
V
C
Collector-emitter  
saturation voltage  
(1)  
V
CE(sat)  
I = 16 A  
I = 3.2 A  
B
C
(1)  
I = 8 A  
V
= 4 V  
Base-emitter voltage  
DC current gain  
2.2  
60  
V
V
h
C
CE  
BE  
FE  
I = 8 A  
V
V
= 4 V  
= 4 V  
15  
5
C
CE  
CE  
(1)  
I = 16 A  
C
V
= 30 V  
Second Breakdown  
Collector Current  
CE  
I
5
A
s/b  
t = 1 s (non repetitive)  
1. Pulsed: Pulse duration = 300 µs, duty cycle 2 %  
3/7  

与2N3773相关器件

型号 品牌 描述 获取价格 数据表
2N3773/D ETC Complementary Silicon Power Transistor

获取价格

2N3773_04 STMICROELECTRONICS Complementary Silicon Power Transistors

获取价格

2N3773_08 STMICROELECTRONICS High power NPN transistor

获取价格

2N3773_12 UTC COMPLEMENTARY SILICON TRANSISTORS

获取价格

2N3773_15 UTC COMPLEMENTARY SILICON TRANSISTORS

获取价格

2N3773G ONSEMI Complementary Silicon Power Transistors

获取价格