Datasheet > 2N3773/D

2N3773/D

更新时间： 2024-02-09 18:51:14

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	94K
描述
Complementary Silicon Power Transistor

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技术参数
数据手册

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2N3773/D 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	TO-3	包装说明：	LEAD FREE, CASE 1-07, TO-3, 2 PIN
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	0.67	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	16 A
集电极-发射极最大电压：	140 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JEDEC-95代码：	TO-204AA
JESD-30 代码：	O-MBFM-P2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
最大功率耗散 (Abs)：	150 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	PIN/PEG
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2N3773/D 数据手册

ON Semiconductort

NPN

2N3773

PNP

Complementary Silicon Power

Transistors

2N6609

The 2N3773 and 2N6609 are PowerBaset power transistors

designed for high power audio, disk head positioners and other linear

applications. These devices can also be used in power switching

circuits such as relay or solenoid drivers, dc to dc converters or

inverters.

*ON Semiconductor Preferred Device

16 AMPERE

COMPLEMENTARY

POWER TRANSISTORS

140 VOLTS

• High Safe Operating Area (100% Tested) 150 W @ 100 V

• Completely Characterized for Linear Operation

• High DC Current Gain and Low Saturation Voltage

150 WATTS

= 15 (Min) @ 8 A, 4 V

CE(sat)

= 1.4 V (Max) @ I = 8 A, I = 0.8 A

C B

• For Low Distortion Complementary Designs

CASE 1–07

TO–204AA

(TO–3)

*MAXIMUM RATINGS

Rating

Symbol

Value

140

160

Unit

Vdc

Adc

Collector Emitter Voltage

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CEX

CBO

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

— Peak (1)

Adc

Total Power Dissipation @ T = 25_C

150

0.855

Watts

W/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

*Indicates JEDEC Registered Data.

1.17

_C/W

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

2N3773/D

12 3 4 5 6 7 8

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