生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.46 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-5 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 70 MHz |
VCEsat-Max: | 0.2 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N3777E3 | MICROSEMI | Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, |
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2N3778 | ETC | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-5 |
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2N3778E3 | MICROSEMI | Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, |
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2N3779 | MICROSEMI | Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, |
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2N377A | ETC | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | TO-5 |
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2N378 | ETC | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3 |
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