生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.74 |
最大集电极电流 (IC): | 0.05 A | 基于收集器的最大容量: | 1.7 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 700 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3663J05Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic | |
2N3663J05Z | TI |
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VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 | |
2N3663J18Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic | |
2N3665 | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | |
2N3665 | ASI |
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Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 | |
2N3665 | CENTRAL |
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Small Signal Transistors | |
2N3665LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI | |
2N3666 | CENTRAL |
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Small Signal Transistors | |
2N3667 | ASI |
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Transistor | |
2N3668 | VISHAY |
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12.5A SILICON CONTROLLED RECTIFIERS |