生命周期: | Obsolete | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.46 | Is Samacsys: | N |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 90 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 12 |
JEDEC-95代码: | TO-205AD | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N3676E3 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 90V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 |
获取价格 |
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2N3677 | NJSEMI | SILICON EPITAXIAL JUNCTION |
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2N3678 | CENTRAL | Small Signal Transistors |
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2N3678 | ONSEMI | 55V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
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2N3678LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 0.0008A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-3 |
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2N3680 | ETC | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 30MA I(C) | TO-77 |
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