Datasheet > 2N3663_01

2N3663_01

更新时间： 2024-11-08 03:56:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
7页	291K
描述
NPN RF Transistor

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2N3663_01 数据手册

2N3663

TO-92

NPN RF Transistor

This device is designed for use as RF amplifiers, oscillators and

multipliers with collector currents in the 1.0 mA to 30 mA range.

Sourced from Process 43. See PN918 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

3.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N3663

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

mW/°C

°C/W

R_θ

Thermal Resistance, Junction to Ambient

357

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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