生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.75 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-5 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 60 MHz | VCEsat-Max: | 0.4 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2849-2 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 | |
2N2849-3 | APITECH |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, | |
2N284A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 125MA I(C) | CAN | |
2N285 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-3 | |
2N2850 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-52VAR | |
2N2850-1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39 | |
2N2850-2 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 | |
2N2850-3 | APITECH |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, | |
2N2851 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P | |
2N2851 | SSDI |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-52VAR, 3 PIN |