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2N2849-1 PDF预览

2N2849-1

更新时间: 2024-11-05 20:25:39
品牌 Logo 应用领域
APITECH 晶体管
页数 文件大小 规格书
2页 208K
描述
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,

2N2849-1 技术参数

生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3最高工作温度:175 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzVCEsat-Max:0.4 V
Base Number Matches:1

2N2849-1 数据手册

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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-52VAR, 3 PIN