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2N2853-3 PDF预览

2N2853-3

更新时间: 2024-11-27 20:25:39
品牌 Logo 应用领域
APITECH 晶体管
页数 文件大小 规格书
2页 208K
描述
Small Signal Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,

2N2853-3 技术参数

生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-5JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
VCEsat-Max:1.5 VBase Number Matches:1

2N2853-3 数据手册

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Small Signal Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
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Small Signal Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
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2N2854-3 APITECH

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Small Signal Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
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2N2855 APITECH

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Small Signal Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-39
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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-111
2N2855-3 ETC

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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-5VAR