Datasheet > 2N2857

2N2857

更新时间： 2024-11-24 07:28:23

品牌	Logo	应用领域
MPLUSE		晶体晶体管微波放大器
页数	文件大小	规格书
4页	124K
描述
Silicon Bipolar Low Noise microwave Transistors

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2N2857 数据手册

Silicon Bipolar Low Noise

Microwave Transistors

2N2857

Case Style TO-72 CAN (509)

Features

• High Gain (19dB Typical @ 450 MHz)

• Low Noise Figure At Low Ic

• Gold Metalization

• Useful To 700 MHz

• Can be Screened to JANTX, JANTXV Equivalent Levels

• Excellent Reliability

Description

Designed especially for low cost, high reliability type

applications, this NPN Silicon Planar Transistor offers

low noise, high gain performance, which meets or

exceeds all JAN specifications. These devices can be

fully tested and screened in accordance with MIL-MRF-

19500 procedures. A 1.8 GHz current gain-bandwidth

product (f_T) is typical for this device. The transistors are

rugged and employ gold metalization for an

unprecedented reliability.

Applications

IF, VHF, UHF, TV and RF amplifiers.

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

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型号	品牌	获取价格	描述	数据表
2N2857_02	SEMICOA	获取价格	Silicon NPN Transistor
2N2857C1	SEME-LAB	获取价格	SILICON RF SMALL SIGNAL NPN TRANSISTOR
2N2857C1_10	SEME-LAB	获取价格	SILICON RF SMALL SIGNAL NPN TRANSISTOR
2N2857C1B-JQRS	SEME-LAB	获取价格	SILICON RF SMALL SIGNAL NPN TRANSISTOR
2N2857C1B-JQRS.DA	SEME-LAB	获取价格	SILICON RF SMALL SIGNAL NPN TRANSISTOR
2N2857C1B-JQRS.GCDE	SEME-LAB	获取价格	SILICON RF SMALL SIGNAL NPN TRANSISTOR
2N2857C1B-JQRS.GCDM	SEME-LAB	获取价格	SILICON RF SMALL SIGNAL NPN TRANSISTOR
2N2857C1B-JQRS.GRPC	SEME-LAB	获取价格	SILICON RF SMALL SIGNAL NPN TRANSISTOR
2N2857CSM	SEME-LAB	获取价格	HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR H
2N2857CSM_10	SEME-LAB	获取价格	SILICON RF SMALL SIGNAL NPN TRANSISTOR