Datasheet > 2N2857C1B-JQRS.GCDM

2N2857C1B-JQRS.GCDM

更新时间： 2024-11-27 06:19:59

品牌	Logo	应用领域
SEME-LAB		晶体晶体管
页数	文件大小	规格书
4页	200K
描述
SILICON RF SMALL SIGNAL NPN TRANSISTOR

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2N2857C1B-JQRS.GCDM 数据手册

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SILICON RF SMALL SIGNAL

NPN TRANSISTOR

2N2857C1

•

High Current Gain-Bandwidth Product (f )

•

Hermetic Ceramic Surface Mount Package

Designed For High Gain, Low Noise Amplifier,

Oscillator and Mixer Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

30V

CBO

CEO

EBO

15V

Continuous Collector Current

Total Power Dissipation at

40mA

T = 25°C

200mW

Derate Above 25°C

1.14mW/°C

300mW

T = 25°C

Total Power Dissipation at

Derate Above 25°C

1.72mW/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ. Max. Units

Thermal Resistance, Junction To Ambient

Thermal Resistance, Junction To Case

875

°C/W

θJA

583.3

θJC

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Telephone +44 (0) 1455 556565

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 7726

Issue 1

Website: http://www.semelab-tt.com

Page 1 of 4

12 3 4

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