是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.4 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-18 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.3 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2861LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, | |
2N2862 | CENTRAL |
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Small Signal Transistors | |
2N2862LEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N2863 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-5 | |
2N2864 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-5 | |
2N2865 | CENTRAL |
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Small Signal NPN Transistors / Dual Transistors | |
2N2865LEADFREE | CENTRAL |
获取价格 |
RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-72, | |
2N2866 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | STR-10 | |
2N2867 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | STR-10 | |
2N2868 | NJSEMI |
获取价格 |
NPN HIGH CURRENT HIGH SPEED SWITCH |