Datasheet > 2N2880_1

2N2880_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	45K
描述
NPN POWER SILICON TRANSISTOR

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2N2880_1 数据手册

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/315

Devices

Qualified Level

JAN

2N2880

2N3749

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

Value

110

8.0

0.5

5.0

Units

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

V_CEO

V_CBO

V_EBO

I_B

Collector Current

I_C

@ T_A= 25⁰C ⁽¹⁾

@ T_C= 100⁰C ⁽²⁾

2.0

Total Power Dissipation

P_T

-65 to +200

⁰C

Operating & Storage Junction Temperature Range

T_op,

stg

TO-59*

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

Symbol

Max.

Unit

⁰C/W

3.33

θJC

1) Derate linearly 11.4 mW/⁰C for T_A> 25⁰C

2) Derate linearly 300 mW/⁰C for T_C> 100⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc

Collector-Emitter Breakdown Voltage

I_C= 10 µAdc

Emitter-Base Breakdown to Voltage

I_E= 10 µAdc

Collector-Emitter Cutoff Current

V_CE= 60 Vdc

Collector-Base Cutoff Current

V_CB= 80 Vdc

Collector-Emitter Cutoff Current

V_CE= 110 Vdc, V_BE= -0.5

Emitter-Base Cutoff Current

V_EB= 6.0 Vdc

110

8.0

Vdc

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEO

Vdc

0.2

1.0

0.2

µAdc

I_CBO

I_CEX

I_EBO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978)620-2600 / Fax: (978) 689-0803

111604

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