是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-276AA |
包装说明: | CHIP CARRIER, R-CBCC-N3 | 针数: | 5 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.3 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JEDEC-95代码: | TO-276AA |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2892 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 5A 4-Pin TO-111 | |
2N2892E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
2N2893 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 5A 4-Pin TO-111 | |
2N2893E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
2N2894 | SEME-LAB |
获取价格 |
PNP SILICON TRANSISTOR | |
2N2894 | COMSET |
获取价格 |
HIGH-SPEED SATURATED SWITCHES | |
2N2894 | NJSEMI |
获取价格 |
HIGH SPEED PNP SILICON PLANAR EPITAXIAL | |
2N2894 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N2894 | MOTOROLA |
获取价格 |
CASE 22-03, STYLE 1 TO-18(TO-206AA) | |
2N2894 | STMICROELECTRONICS |
获取价格 |
HIGH-SPEED SATURATED SWITCHES |