Datasheet > 2N2894_12

2N2894_12

更新时间： 2024-11-07 12:53:11

品牌	Logo	应用领域
COMSET		/
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3页	78K
描述
HIGH-SPEED SATURATED SWITCHES

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2N2894_12 数据手册

NPN 2N2894

HIGH-SPEED SATURATED SWITCHES

The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.

They are intended for high speed, low saturation switching applications up to 100 mA.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CEO

V_CBO

V_CES

V_EBO

I_C

Collector-Emitter Voltage (I_B= 0)

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage(V_BE= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

-12

-4

-200

@ T_amb= 25°

@ T_case= 25°

@ T_case<100°

0.36

1.2

P_D

Total Power Dissipation

T_J

Junction Temperature

-65 to +200

°C

T_Stg

Storage Temperature range

-65 to +200

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJ-a

R_thJ-c

Thermal Resistance, Junction-ambient

Thermal Resistance, Junction-case

486

146

°C/ W

COMSET SEMICONDUCTORS

1/3

12 3

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与2N2894_12相关器件

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2N2894ACSM_08	SEME-LAB	获取价格	HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC
2N2894ADCSM	SEME-LAB	获取价格	DUAL HIGH SPEED, MEDIUM POWER
2N2894CSM	SEME-LAB	获取价格	HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC
2N2894CSM_03	SEME-LAB	获取价格	HIGH SPEED, MEDIUM POWER, PNP
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