Datasheet > 2N2880_1

2N2880_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	45K
描述
NPN POWER SILICON TRANSISTOR

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数据手册

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2N2880_1 数据手册

2N2880, 2N3749 JAN SERIES

ELECTRICAL CHARACTERISTICS (Con’t)

Characteristics

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

Forward-Current Transfer Ratio

I_C= 50 mAdc, V_CE= 5.0 Vdc

I_C= 1.0 Adc, V_CE= 2.0 Vdc

I_C= 5.0 Adc, V_CE= 5.0 Vdc

Base-Emitter Voltage Non-Saturated

V_CE= 2.0 Adc, I_C=1.0 Adc

Collector-Emitter Saturation Voltage

I_C= 1.0 Adc, I_B= 0.1 Adc

120

h_FE

V_BE

1.2

Vdc

0.25

1.5

V_CE(sat)

I_C= 5.0 Adc, I_B= 0.5 Adc

Base-Emitter Saturation Voltage

I_C= 1.0 Adc, I_B= 0.1 Adc

V_BE(sat)

1.2

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

I_C= 1.0 Adc, V_CE= 10 Vdc, f = 10 MHz

Small-Signal Short-Circuit Forward Current Transfer Ratio

I_C= 50 mAdc, V_CE= 5.0 Vdc, f = 1 kHz

Output Capacitance

3.0

⏐h_fe⏐

h_fe

140

150

C_obo

V_CB= 10 Vdc, I_E= 0, 100 ≤ f ≤ 1.0 MHz

SAFE OPERATING AREA

DC Tests

T_C= 100⁰C, t = 10 s

Test 1

V_CE= 80 Vdc, I_C= 80 mAdc

Test 2

V_CE= 20 Vdc, I_C= 1.5 Adc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

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