是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-5 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.3 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2891SMD | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed | |
2N2891SMD05 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed | |
2N2892 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 5A 4-Pin TO-111 | |
2N2892E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
2N2893 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 5A 4-Pin TO-111 | |
2N2893E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
2N2894 | SEME-LAB |
获取价格 |
PNP SILICON TRANSISTOR | |
2N2894 | COMSET |
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HIGH-SPEED SATURATED SWITCHES | |
2N2894 | NJSEMI |
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HIGH SPEED PNP SILICON PLANAR EPITAXIAL | |
2N2894 | CENTRAL |
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Small Signal Transistors |