是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-52 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.51 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.85 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N2851-1 | APITECH | Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, |
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2N2851-2 | APITECH | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 |
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2N2851-3 | ETC | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-5VAR |
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2N2852 | ETC | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-52VAR |
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2N2852-1 | ETC | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39 |
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2N2852-2 | ETC | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
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