是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-39 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.4 |
最大集电极电流 (IC): | 0.8 A | 集电极-发射极最大电压: | 35 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 75 |
JEDEC-95代码: | TO-39 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 120 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2801LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PI | |
2N2802 | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N2803 | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N2804 | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N2805 | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N2806 | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2807 | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2807 | NJSEMI |
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SI PNP LO-PWR BJT | |
2N281 | ETC |
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TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 50MA I(C) | CAN | |
2N2811 | NJSEMI |
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SILICON PLANAR NPN POWER TRANSISTORS |