Datasheet > 2N2816

2N2816

更新时间： 2024-11-23 23:19:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	19K
描述
TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16

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中文翻译

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数据手册

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2N2816 数据手册

2N2894

PNP SILICON

TRANSISTOR

MECHANICAL DATA

Dimensions in mm (inches)

5.84 (0.230)

5.31 (0.209)

FEATURES

4.95 (0.195)

4.52 (0.178)

• SILICON PNP TRANSISTOR

• HIGH SPEED, LOW SATURATION SWITCH

APPLICATIONS:

0.48 (0.019)

0.41 (0.016)

dia.

GENERAL PURPOSE SWITCHING

APPLICATIONS

2.54 (0.100)

Nom.

TO18

Underside View

PIN1 – EMITER

PIN 2 – BASE

PIN 3 – COLLECTOR

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Collector Current

12V

CBO

CEO

EBO

200mA

Total Device Dissipation @ T =25°C

360mW

2.06mW / °C

12W

Derate above 25°C

Total Device Dissipation @ T =25°C

Derate above 25°C

Operating and Storage Temperature Range

6.85mW / °C

–65 to +200°C

, T

STG

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 4/99

中文翻译

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与2N2816相关器件

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2N2818	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 20A I(C) \| STR-5/16
2N2819	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 25A I(C) \| STR-5/16
2N282	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 125MA I(C) \| CAN
2N2820	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 25A I(C) \| STR-5/16
2N2821	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 25A I(C) \| STR-5/16
2N2822	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 25A I(C) \| STR-5/16
2N2823	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 30A I(C) \| STR-5/16
2N2824	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 30A I(C) \| STR-5/16
2N2825	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 30A I(C) \| STR-5/16