品牌 | Logo | 应用领域 |
MICRO-ELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
1页 | 67K | |
描述 | ||
Small Signal Bipolar Transistor, 0.8A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 |
生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.4 |
最大集电极电流 (IC): | 0.8 A | 集电极-发射极最大电压: | 35 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 120 MHz |
Base Number Matches: | 1 |
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