生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.8 | 基于收集器的最大容量: | 8 pF |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-5 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.8 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N2849 | ETC | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-52VAR |
获取价格 |
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2N2849-1 | APITECH | Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, |
获取价格 |
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2N2849-2 | ETC | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
获取价格 |
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2N2849-3 | APITECH | Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, |
获取价格 |
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2N284A | ETC | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 125MA I(C) | CAN |
获取价格 |
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2N285 | ETC | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-3 |
获取价格 |