生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.78 |
最大集电极电流 (IC): | 0.8 A | 配置: | Single |
最高工作温度: | 175 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.8 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 120 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2801LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PI | |
2N2802 | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2803 | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2804 | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2805 | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N2806 | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N2807 | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N2807 | NJSEMI |
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SI PNP LO-PWR BJT | |
2N281 | ETC |
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TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 50MA I(C) | CAN | |
2N2811 | NJSEMI |
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SILICON PLANAR NPN POWER TRANSISTORS |