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2N2669 PDF预览

2N2669

更新时间: 2024-11-23 23:19:43
品牌 Logo 应用领域
其他 - ETC 晶体晶体管光电二极管
页数 文件大小 规格书
1页 78K
描述
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 3A I(C) | TO-210VAR10

2N2669 数据手册

  
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与2N2669相关器件

型号 品牌 获取价格 描述 数据表
2N267 ETC

获取价格

TRANSISTOR | BJT | PNP | 10MA I(C)
2N2670 ETC

获取价格

TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 3A I(C) | TO-210VAR10
2N2679 SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 30V V(DRM), 30V V(RRM), 1 Element
2N2679A SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 30V V(DRM), 30V V(RRM), 1 Element
2N268 ETC

获取价格

TRANSISTOR | BJT | PNP | 3A I(C) | TO-3
2N2680A SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 60V V(DRM), 60V V(RRM), 1 Element
2N2681A SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme
2N2682 SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme
2N2683 SSDI

获取价格

Silicon Controlled Rectifier, 0.28A I(T)RMS, 280mA I(T), 30V V(DRM), 30V V(RRM), 1 Element
2N2683A SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 30V V(DRM), 30V V(RRM), 1 Element