生命周期: | Contact Manufacturer | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.30.00.80 |
风险等级: | 5.83 | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 200 V/us | 最大直流栅极触发电流: | 0.02 mA |
最大直流栅极触发电压: | 0.8 V | 最大维持电流: | 0.5 mA |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
最大漏电流: | 0.0001 mA | 通态非重复峰值电流: | 2 A |
元件数量: | 1 | 端子数量: | 3 |
最大通态电流: | 350 A | 最高工作温度: | 125 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 认证状态: | Not Qualified |
最大均方根通态电流: | 0.28 A | 断态重复峰值电压: | 60 V |
重复峰值反向电压: | 60 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 触发设备类型: | SCR |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N2685 | SSDI | Silicon Controlled Rectifier, 0.28A I(T)RMS, 280mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme |
获取价格 |
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2N2685A | SSDI | Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme |
获取价格 |
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2N2686 | SSDI | Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme |
获取价格 |
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2N2686A | SSDI | Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme |
获取价格 |
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2N2687 | SSDI | Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 30V V(DRM), 30V V(RRM), 1 Element |
获取价格 |
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2N2688 | SSDI | Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 60V V(DRM), 60V V(RRM), 1 Element |
获取价格 |