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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2N2685 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.28A I(T)RMS, 280mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme |
|
| 2N2685A | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme |
|
| 2N2686 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme |
|
| 2N2686A | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme |
|
| 2N2687 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 30V V(DRM), 30V V(RRM), 1 Element |
|
| 2N2688 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 60V V(DRM), 60V V(RRM), 1 Element |
|
| 2N2689 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme |
|
| 2N268A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-3 |
|
| 2N269 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 100MA I(C) | TO-1 |
|
| 2N2690 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme |
|
解析光耦仿真器：升级光耦合器技术的必要性
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