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2N2683 PDF预览

2N2683

更新时间: 2024-11-27 20:57:27
品牌 Logo 应用领域
SSDI 栅极
页数 文件大小 规格书
1页 49K
描述
Silicon Controlled Rectifier, 0.28A I(T)RMS, 280mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18, TO-18, 3 PIN

2N2683 技术参数

生命周期:Contact Manufacturer包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.72
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:0.02 mA最大直流栅极触发电压:0.8 V
最大维持电流:1 mAJEDEC-95代码:TO-18
JESD-30 代码:O-MBCY-W3最大漏电流:0.02 mA
通态非重复峰值电流:2 A元件数量:1
端子数量:3最大通态电流:280 A
最高工作温度:100 °C最低工作温度:-60 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL最大均方根通态电流:0.28 A
断态重复峰值电压:30 V重复峰值反向电压:30 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
触发设备类型:SCRBase Number Matches:1

2N2683 数据手册

  

与2N2683相关器件

型号 品牌 获取价格 描述 数据表
2N2683A SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 30V V(DRM), 30V V(RRM), 1 Element
2N2684 SSDI

获取价格

Silicon Controlled Rectifier, 0.28A I(T)RMS, 280mA I(T), 60V V(DRM), 60V V(RRM), 1 Element
2N2684A SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 60V V(DRM), 60V V(RRM), 1 Element
2N2685 SSDI

获取价格

Silicon Controlled Rectifier, 0.28A I(T)RMS, 280mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme
2N2685A SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme
2N2686 SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme
2N2686A SSDI

获取价格

Silicon Controlled Rectifier, 0.35A I(T)RMS, 350mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme
2N2687 SSDI

获取价格

Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 30V V(DRM), 30V V(RRM), 1 Element
2N2688 SSDI

获取价格

Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 60V V(DRM), 60V V(RRM), 1 Element
2N2689 SSDI

获取价格

Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme