Datasheet > 2N2604

2N2604

更新时间： 2024-11-23 22:35:51

品牌	Logo	应用领域
SEMICOA		晶体晶体管开关
页数	文件大小	规格书
1页	33K
描述
Chip Type 2C2605 Geometry 0220 Polarity NPN

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2N2604 数据手册

Data Sheet No. 2C2605

Ge ne ric Pa c ka ge d Pa rts :

Chip Type 2C2605

Geometry 0220

Polarity NPN

2N2604, 2N2605, 2N3798,

2N3799, 2N3810, 2N3811

Chip type 2C2605 by Semicoa Semi-

conductors provides performance

similar to these devices.

Product Summary:

APPLICATIONS: Designed for high

speed switching applications.

Part Numbers:

2N2604, 2N2605, 2N3789, 2N3799, 2N3810,

2N3811

Features:

High speed switching capabilities

Mechanical Specifications

Top

Backside

Emitter

Base

Al - 19.5 kÅ min.

Metallization

Au - 6.5 kÅ nom.

3.6 mils diameter

2.5 mils diameter

Bonding Pad Size

8 mils nominal

Die Thickness

Chip Area

18 mils x 18 mils

Silox Passivated

Top Surface

Electrical Characteristics

T_A= 25^oC

Parameter

Test conditions

I_C= 10.0 A, I_B= 0

Min

Max

---

Unit

V dc

BV_CEO

BV_CBO

BV_EBO

I_CBO

I_C= 10 µA, I_E= 0

---

I_E= 10 µA, I_C= 0

6.0

---

V_CB= 60 Vc, I_E= 0

h_FE

I_C= 500 µA dc, V_CE= 5.0 V

150

450

---

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less

than 300 µs, duty cycle less than 2%.

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2N2604LEADFREE	CENTRAL	获取价格	暂无描述
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2N2605	MICROSEMI	获取价格	PNP SILICON LOW POWER TRANSISTOR
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2N2605UB	MICROSEMI	获取价格	PNP SILICON LOW POWER TRANSISTOR