生命周期: | Obsolete | 包装说明: | TO-64, 2 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.67 |
Is Samacsys: | N | 配置: | SINGLE |
最大直流栅极触发电流: | 15 mA | JEDEC-95代码: | TO-64 |
JESD-30 代码: | O-MUPM-D2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
认证状态: | Not Qualified | 最大均方根通态电流: | 7.5 A |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2619LEADFREE | CENTRAL |
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Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(RRM), 1 Element, TO-64 | |
2N263 | ETC |
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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | TO-22VAR | |
2N2631 | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-39 | |
2N2632 | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 | |
2N2633 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10 | |
2N2634 | ETC |
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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | STR-10 | |
2N2635 | NJSEMI |
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20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A | |
2N2639 | NJSEMI |
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DUAL NPN LOW LEVEL NOISE DIFFERENTIAL AMPLIFIERS | |
2N2639 | MOTOROLA |
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DUAL AMPLIFIER TRANSISTORS NPN SILICON | |
2N2639 | CENTRAL |
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Dual Transistors |