Datasheet > 2N2609_08

2N2609_08

更新时间： 2022-09-16 10:17:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
1页	40K
描述
P-CHANNEL J-FET

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2N2609_08 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

P-CHANNEL J-FET

Equivalent To MIL-PRF-19500/296

DEVICES

LEVELS

2N2609

MQ = JAN Equivalent

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Gate-Source Voltage

Power Dissipation⁽¹⁾

Symbol

V_GSS

Value

Unit

T_A= +25°C

P_D

300

°C

Operating Junction & Storage Temperature Range

(1) Derate linearly 1.71 mW/°C for T_A> +25°C.

T_op, T_stg

-65 to + 200

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Gate-Source Breakdown Voltage

V_(BR)GSS

Vdc

V_DS= 0, I_G= 1.0μA dc

TO-18

(TO-206AA)

Gate Reverse Current

V_DS= 0, V_GS= 30V dc

V_DS= 0, V_GS= 15V dc

22.5

I_GSS

ηA

Drain Current

I_DSS

-2.0

-10.0

6.0

_GS= 0V dc, V_DS= 5.0V dc

Gate-Source Cutoff Voltage

V_DS= 5.0V, I_D= 1.0μA dc

V_GS(off)

0.75

Vdc

Magnitude of Small-Signal, Common-Source

Short-Circuit Forward Transfer Admittance

V_GS= 0, V_DS= 5.0V dc, f = 1.0kHz

|Y_fs2

2,000

6,250

μmho

Small-Signal, Common-Source Short-Circuit

Input Capacitance

C_iss

V_GS= 0, V_DS= 5.0V dc, f = 1.0MHz

Common-Source Spot Noise Figure

V_GS= 0, V_DS= 5.0V dc, f = 1.0kHz

B_W= 16%, R_G= 1.0 megohms

e_gen= 1.82mV dc, R_L= 220Ω

3.0

T4-LDS-0003 Rev. 1 (063374)

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