Datasheet > 2N2604_1

2N2604_1

更新时间： 2024-09-24 07:28:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
4页	153K
描述
PNP SILICON LOW POWER TRANSISTOR

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数据手册

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2N2604_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/354

DEVICES

LEVELS

JAN

JANTX

JANTXV

2N2604

2N2605

2N2604UB

2N2605UB

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Base Voltage

Symbol 2N2604

2N2605

Unit

Vdc

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

6.0

Vdc

Emitter-Base Voltage

Vdc

Collector Current

Total Power Dissipation @ T_A= +25°C ⁽¹⁾

mAdc

mW/°C

°C

P_T

400

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

THERMAL CHARACTERISTICS

TO-46 (TO-206AB)

Parameters / Test Conditions

Symbol

Max.

437

Unit

Thermal Resistance, Junction-to-Ambient

°C/mW

R_θJA

275

Note:

1/ Consult 19500/354 for thermal curves

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Base Cutoff Current

V_CB= 80V dc

2N2604, UB

2N2605, UB

2N2604, 2N2605, UB

10.0

5.0

uAdc

nAdc

uAdc

_CB= 70V dc

_CB= 50V dc

I_CBO

UB Package

V_CB= 50V dc, T_A= +150°C

Collector-Emitter Breakdown Current

I_C= 10mAdc

V_(BR)CEO

Vdc

Emitter-Base Cutoff Current

V_EB= 6.0Vdc

uAdc

ηAdc

10.0

2.0

I_EBO

_EB= 5.0Vdc

Collector-Emitter Cutoff Current

V_CE= 50Vdc

I_CES

ηAdc

T4-LDS-0092 Rev. 2 (101320)

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