生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.62 |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE |
最大直流栅极触发电流: | 0.2 mA | JEDEC-95代码: | TO-5 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
最大均方根通态电流: | 0.3454 A | 断态重复峰值电压: | 50 V |
重复峰值反向电压: | 50 V | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2324 | MICROSEMI |
获取价格 |
SCRs 1.6 Amp, Planear | |
2N2324 | CENTRAL |
获取价格 |
SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS | |
2N2324 | NJSEMI |
获取价格 |
SCR, V(DRM) = 100 V TO 199.9 V | |
2N2324 | COMSET |
获取价格 |
SILICON THYRISTORS | |
2N2324 | ASI |
获取价格 |
Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme | |
2N2324 | DIGITRON |
获取价格 |
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Inp | |
2N2324A | NJSEMI |
获取价格 |
SCR, V(DRM) = 100 V TO 199.9 V | |
2N2324A | MICROSEMI |
获取价格 |
SILICON CONTROLLED RECTIFIER | |
2N2324A | DIGITRON |
获取价格 |
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Inp | |
2N2324AS | MICROSEMI |
获取价格 |
SILICON CONTROLLED RECTIFIER |