Datasheet > 2N2326

2N2326

更新时间： 2024-11-24 20:24:43

品牌	Logo	应用领域
DIGITRON		栅栅极
页数	文件大小	规格书
3页	1543K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39

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2N2326 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

2N2326 数据手册

2N2322(A)-2N2329(A)

SILICON CONTROLLED RECTFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

2N2322

2N2323

2N2324

2N2325

2N2326

2N2327

2N2328

Ratings

Symbol

Units

2N2322A

2N2323A

2N2324A

2N2325A

2N2326A

2N2327A

2N2328A

2N2329

400

Peak repetitive forward voltage

Peak repetitive reverse voltage

Non-repetitive peak reverse voltage

V_DRM

V_RRM

V_RSM

100

150

225

200

300

250

350

300

400

500

DC on-state current

80°C ambient

85°C case

I_T(AV)

300

1.6

One cycle surge on-state current

Repetitive peak on-state current

Gate power dissipation

Peak gate current

I_TSM

I_TM

P_GM

P_GM(AV)

I_GM

0.1

0.01

100

Reverse gate voltage

V_GR

Reverse gate current

I_GR

°C

Operating temperature

Storage junction temperature

T_op

-65 to +125

-65 to +150

T_stg

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Characteristics

Off-state current

Symbol

I_DRM

Min

Typ

0.1

Max

Unit

Test Condition

µA

V_DRM= rating, R_GK= 1K (2K for “A” types)

V_RRM= rating, R_GK= 1K (2K for “A” types)

Reverse current

I_RRM

Gate trigger current

“A” types

Ω

V_D= 6V, R_L= 100

I_GT

µA

Non “A” types

200

Gate trigger voltage

“A” types

Ω

V_D= 6V, R_GK= 2K, R_L= 100

V_GT

0.35

0.52

0.55

0.60

0.80

Non “A” types

V_D= 6V, R_GK= 1K, R_L= 100Ω

I_TM= 4A (pulse test)

On-state voltage

Holding current

V_TM

I_H

2.0

0.3

2.2

2.0

200

µA

µs

V_D= 6V, R_GK= 1K (2K for “A” types)

V_GR= 6V

Reverse gate current

Delay time

I_GR

t_d

0.6

0.4

I_G= 10mA, I_T= 1A, V_D= 30V

I_T= 1A, I_R= 1A, R_GK= 1K

Rise time

t_r

µs

Circuit commutated turn off time

t_q

µs

ELECTRICAL CHARACTERISTICS @ 125°C

Characteristics Symbol

Off-state current

Min

Typ

Max

Unit

µA

Test Condition

I_DRM

I_RRM

V_GT

100

V_DRM= rating, R_GK= 1K (2K for “A” types)

V_RRM= rating, R_GK= 1K (2K for “A” types)

V_D= rated V_D, R_GK= 1K (2K for “A” types)

Reverse current

Gate trigger voltage

0.1

0.3

Holding current

“A” types

I_H

0.1

V_D= 6V, R_GK= 2K

V_D= 6V, R_GK= 1K

Non “A” types

0.15

Off-state voltage – critical rate of rise

“A” types

dv/dt

0.7

1.8

V/µs

V_DRM= rating, R_GK= 2K

V_DRM= rating, R_GK= 1K

Non “A” types

Rev. 20130116

12 3

中文翻译

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与2N2326相关器件

型号	品牌	获取价格	描述	数据表
2N2326A	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2326A	NJSEMI	获取价格	Thyristor SCR 200V 15A 3-Pin TO-5
2N2326A	CENTRAL	获取价格	1.6A,200V Through-Hole SCR
2N2326AS	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2326ASE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5,
2N2326S	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2326SE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5,
2N2327	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 250; Max TMS Bridge Inp
2N2327	NJSEMI	获取价格	Thyristor SCR 250V 15A 3-Pin TO-39
2N2327	MICROSEMI	获取价格	SCRs 1.6 Amp, Planear

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