Datasheet > 2N2326ASE3

2N2326ASE3

更新时间： 2024-11-28 06:20:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	57K
描述
Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N2326ASE3 数据手册

TECHNICAL DATA

SILICON CONTROLLED RECTIFIER

Qualified per MIL-PRF-19500/ 276

Devices

Qualified

Level

2N2323

2N2323S

2N2323A

2N2324

2N2324S

2N2324A

2N2326

2N2326S

2N2326A

2N2328

2N2328S

2N2328A

JAN

JANTX

JANTXV

2N2329

2N2329S

2N2323AS 2N2324AS 2N2326AS 2N2328AS

MAXIMUM RATINGS

2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/

2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S

Ratings

Reverse Voltage

Sym

2N2329,S Unit

V_RM

100

200

300

400

500

Vdc

Vpk

Adc

Vpk

⁰C

Working Peak Reverse Voltage V_RM

150

300

400

Forward Blocking Voltage

V_FBXM

I_O

50^(3/4)

100^(3/4)

200^(3/4)

0.22

300^(3/4)

400⁽³⁾

Average Forward Current ⁽¹⁾

Forward Current Surge Peak⁽²⁾I_FSM

Cathode-Gate Current

Operating Temperature

Storage Junction Temp

V_KGM

T_op

T_stg

-65 to +125

-65 to +150

⁰C

1) This average forward current is for an ambient temperature of 80⁰C and 180 electrical degrees of

conduction.

2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during

the first 5 ms after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured

from the point where the thyristor voltage has decayed to 90% of its initial blocking value.

3) Gate connected to cathode through 1,000 ohm resistor.

TO-5

4) Gate connected to cathode through 2,000 ohm resistor.

*See appendix A

for package outline

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min.

Max.

Unit

SUBGROUP 2 TESTING

Reverse Blocking Current

R₂= 1 km

2N2323 thru 2N2329

2N2323S thru 2N2329S

2N2323A thru 2N2328A

2N2323AS thru 2N2328AS

2N2323, S, A, AS

2N2324, S, A, AS

2N2326, S, A, AS

2N2328, S, A, AS

2N2329, S,

R₂= 2 km

mAdc

I_RBX1

V_R= 50 Vdc

V_R= 100 Vdc

V_R= 200 Vdc

V_R= 300 Vdc

V_R= 400 Vdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

Page 1 of 2

中文翻译

下载PDF

与2N2326ASE3相关器件

型号	品牌	获取价格	描述	数据表
2N2326S	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2326SE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5,
2N2327	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 250; Max TMS Bridge Inp
2N2327	NJSEMI	获取价格	Thyristor SCR 250V 15A 3-Pin TO-39
2N2327	MICROSEMI	获取价格	SCRs 1.6 Amp, Planear
2N2327	CENTRAL	获取价格	SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
2N2327	COMSET	获取价格	SILICON THYRISTORS
2N2327A	MICROSEMI	获取价格	SCRs 1.6 Amp, Planear
2N2327A	NJSEMI	获取价格	Thyristor SCR 250V 15A 3-Pin TO-39
2N2327AE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39,