Datasheet > 2N2329

2N2329

更新时间： 2024-11-27 12:51:07

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描述
SILICON THYRISTORS

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中文翻译

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数据手册

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2N2329 数据手册

2N2327 thur 2N2329

SILICON THYRISTORS

All-diffused PNPN thyristors designed for grating operation in mA/µA signal

or detection circuits

Compliance to RoHS.

MAXIMUM RATINGS (*)

T_J=125°C unless otherwise noted, R_GK=1000Ω

Symbol

V_RSM(REP)

Ratings

2N2327

2N2328

2N2329

Unit

Peak reverse blocking voltage (1)

250

350

300

400

500

V_RSM(NON-

REP)

Non-repetitive peak blocking reverse

voltage (t<5.0 ms)

Forward Current RMS

(all conduction angles)

Peak Surge Current

(One-Half Cycle, 60Hz)

No Repetition Until Thermal Equilibrium

is Restored.

1.6

I_T(RMS)

I_TSM

Peak Gate Power – Forward

Average Gate Power - Forward

Peak Gate Current – Forward

Peak Gate Voltage - Forward

Peak Gate Voltage - Reverse

0.1

0.01

0.1

P_GM

P_G(AV)

I_GM

V_GFM

V_GRM

6.0

Operating Junction Temperature Range

Storage Temperature Range

T_J

T_STG

-65 to +125

-65 to +150

°C

12/11/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

中文翻译

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与2N2329相关器件

型号	品牌	获取价格	描述	数据表
2N2329A	NJSEMI	获取价格	SILICON CONTROLLED RECTIFIERS
2N2329A	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2329AS	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2329E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5,
2N2329LEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, HE
2N2329S	MICROSEMI	获取价格	SILICON CONTROLLED RECTIFIER
2N2329SE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5,
2N2330	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| TO-5
2N2331	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| TO-18
2N2332	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 5V V(BR)CEO \| 100MA I(C) \| TO-18