型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2329E3 | MICROSEMI |
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Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, | |
2N2329LEADFREE | CENTRAL |
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Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, HE | |
2N2329S | MICROSEMI |
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SILICON CONTROLLED RECTIFIER | |
2N2329SE3 | MICROSEMI |
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Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, | |
2N2330 | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-5 | |
2N2331 | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-18 | |
2N2332 | ETC |
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TRANSISTOR | BJT | PNP | 5V V(BR)CEO | 100MA I(C) | TO-18 | |
2N2333 | ETC |
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TRANSISTOR | BJT | PNP | 5V V(BR)CEO | 100MA I(C) | TO-18 | |
2N2334 | ETC |
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TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 | |
2N2335 | ETC |
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TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 |