2N2327

更新时间： 2024-02-29 02:05:43

品牌	Logo	应用领域
CENTRAL		栅极触发装置可控硅整流器
页数	文件大小	规格书
2页	131K
描述
SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

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技术参数
数据手册

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2N2327 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.74
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	SCR	Base Number Matches：	1

2N2327 数据手册

2N2322 2N2326

2N2323 2N2327

2N2324 2N2328

2N2325 2N2329

Central

Semiconductor Corp.

SILICON CONTROLLED RECTIFIER

1.6 AMPS, 25 THRU 400 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2322

Series types are hermetically sealed Silicon

Controlled Rectifiers designed for sensing

circuit applications and control systems.

MARKING: FULL PART NUMBER

2N23__

TO-39 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL 22

29 UNITS

Peak Repetitive Forward Voltage

Peak Repetitive Reverse Voltage

Non-Repetitive Peak Reverse Voltage

RMS On-State Current

50 100 150 200 250 300 400

DRM

RRM

RSM

50 100 150 200 250 300 400

75 150 225 300 350 400 500

1.6

1.0

T(RMS)

Average On-State Current (T =85°C)

T(AV)

Peak One Cycle Surge (t=8.3ms)

TSM

Peak Gate Power

0.10

Average Gate Power

Peak Gate Current

0.01

G(AV)

0.10

Peak Gate Voltage

6.0

Junction Temperature

Storage Temperature

-65 to +125

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

Rated V , V

MIN

MAX

5.0

UNITS

μA

, I

, R =1.0kΩ

DRM RRM

DRM RRM GK

V =6.0V, R =100Ω

200

2.0

0.8

1.5

μA

V =6.0V, R =1.0kΩ

V =6.0V, R =100Ω

=1.0A, tp=380μs

R0 (11-December 2008)

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与2N2327相关器件

型号	品牌	获取价格	描述	数据表
2N2327A	MICROSEMI	获取价格	SCRs 1.6 Amp, Planear
2N2327A	NJSEMI	获取价格	Thyristor SCR 250V 15A 3-Pin TO-39
2N2327AE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39,
2N2327AS	MICROSEMI	获取价格	Thyristor Switches
2N2327E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39,
2N2327LEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 1.6A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, HE
2N2327PBFREE	CENTRAL	获取价格	Silicon Controlled Rectifier,
2N2327S	MICROSEMI	获取价格	Thyristor Switches
2N2328	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 300; Max TMS Bridge Inp
2N2328	MICROSEMI	获取价格	SCRs 1.6 Amp, Planear