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2N2219A PDF预览

2N2219A

更新时间: 2024-11-17 06:19:59
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页数 文件大小 规格书
3页 205K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

2N2219A 数据手册

 浏览型号2N2219A的Datasheet PDF文件第2页浏览型号2N2219A的Datasheet PDF文件第3页 
NPN 2N2218A – 2N2219A  
SILICON PLANAR EPITAXIAL TRANSISTORS  
The 2N2218A and 2N2219A are NPN transistors mounted in TO-39 metal case .  
They are designed for high-speed switching applications,  
And feature useful current gain over a wide range of collector current, low leakage currents and low  
saturation voltages.  
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N2218A  
2N2219A  
2N2218A  
2N2219A  
2N2218A  
Collector-Emitter Voltage  
Collector-Base Voltage  
VCEO  
40  
V
VCBO  
75  
V
Emitter-Base Voltage  
Collector Current  
VEBO  
IC  
6
V
2N2219A  
2N2218A  
2N2219A  
2N2218A  
2N2219A  
2N2218A  
2N2219A  
2N2218A  
800  
0.8  
3
mA  
Total Power Dissipation  
Total Power Dissipation  
Junction Temperature  
@ Tamb = 25°  
@ Tcase= 25°  
PD  
PD  
TJ  
Watts  
Watts  
°C  
175  
2N2219A  
2N2218A  
2N2219A  
Storage Temperature range  
TStg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to ambient in  
free air  
2N2218A  
2N2219A  
2N2218A  
2N2219A  
RthJ-a  
RthJ-c  
50  
°C/W  
Thermal Resistance, Junction to case  
187.5  
°C/W  
COMSET SEMICONDUCTORS  
1/3  

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