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2N2219AL PDF预览

2N2219AL

更新时间: 2024-11-16 22:44:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管
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2页 62K
描述
NPN SWITCHING SILICON TRANSISTOR

2N2219AL 数据手册

 浏览型号2N2219AL的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN SWITCHING SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 251  
Devices  
Qualified Level  
JAN  
2N2218  
2N2218A  
2N2218AL  
2N2219  
2N2219A  
2N2219AL  
JANTX  
JANTXV  
JANS  
MAXIMUM RATINGS  
Ratings  
2N2218 2N2218A; L  
2N2219 2N2219A; L  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
30  
50  
Vdc  
Vdc  
VCEO  
VCBO  
VEBO  
IC  
60  
75  
TO- 39* (TO-205AD)  
2N2218, 2N2218A  
2N2219, 2N2219A  
5.0  
6.0  
Vdc  
800  
mAdc  
Total Power Dissipation  
@ TA = +250C(1)  
@ TC = +250C(2)  
0.8  
3.0  
W
W
0C  
PT  
Operating & Storage Junction Temp. Range  
-55 to +200  
Top, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
59  
R
qJC  
TO-5*  
2N2218AL,  
2N2219AL  
1) Derate linearly 4.6 mW/0C above TA > +250C  
2) Derate linearly 17.0 mW/0C above TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IE = 10 mAdc  
30  
50  
Vdc  
2N2218; 2N2219  
2N2218A; L; 2N2219A; L  
V(BR)CEO  
Emitter-Base Cutoff Current  
VEB = 5.0 Vdc  
VEB = 6.0 Vdc  
10  
10  
10  
2N2218; 2N2219  
2N2218A; L; 2N2219A; L  
All Types  
mAdc  
hAdc  
IEBO  
VEB = 4.0 Vdc  
Collector-Base Cutoff Current  
VCE = 30 Vdc  
VCE = 50 Vdc  
10  
10  
2N2218; 2N2219  
2N2218A; L; 2N2219A; L  
ICES  
hAdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N2219AL 替代型号

型号 品牌 替代类型 描述 数据表
2N2219A MICROSEMI

完全替代

NPN SWITCHING SILICON TRANSISTOR

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