Datasheet > 2N222

2N222

更新时间： 2024-11-17 22:44:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体放大器晶体管
页数	文件大小	规格书
6页	241K
描述
Amplifier Transistors

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2N222 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

6.0

600

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

6.0

—

Vdc

(BR)CEO

(I = 10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 10 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

Vdc

(BR)EBO

Collector Cutoff Current

(V = 60 Vdc, V

nAdc

µAdc

CEX

= 3.0 Vdc)

CE EB(off)

Collector Cutoff Current

CBO

= 60 Vdc, I = 0)

—

0.01

= 60 Vdc, I = 0, T = 150°C)

Emitter Cutoff Current

(V = 3.0 Vdc, I = 0)

—

nAdc

EBO

Collector Cutoff Current

(V = 10 V)

CEO

Base Cutoff Current

(V = 60 Vdc, V

BEX

= 3.0 Vdc)

CE EB(off)

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6

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