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2N2219A_03 PDF预览

2N2219A_03

更新时间: 2024-11-30 03:56:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关
页数 文件大小 规格书
7页 171K
描述
HIGH SPEED SWITCHES

2N2219A_03 数据手册

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2N2219A  
2N2222A  
®
HIGH SPEED SWITCHES  
PRELIMINARY DATA  
DESCRIPTION  
The 2N2219A and 2N2222A are silicon Planar  
Epitaxial NPN transistors in Jedec TO-39 (for  
2N2219A) and in Jedec TO-18 (for 2N2222A)  
metal case. They are designed for high speed  
switching application at collector current up to  
500mA, and feature useful current gain over a  
wide range of collector current, low leakage  
currents and low saturation voltage.  
TO-18  
TO-39  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
75  
Unit  
V
40  
V
6
V
0.6  
0.8  
A
ICM  
Collector Peak Current (tp < 5 ms)  
A
o
Ptot  
Total Dissipation at Tamb 25 C  
0.8  
0.5  
W
W
for 2N2219A  
for 2N2222A  
at TC 25 C  
for 2N2219A  
for 2N2222A  
o
3
1.8  
W
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
1/7  
February 2003  

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