Datasheet > 2N2219AHR

2N2219AHR

更新时间： 2024-11-17 12:50:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
9页	133K
描述
Hi-Rel NPN bipolar transistor 40 V, 0.8 A

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2N2219AHR 数据手册

2N2219AHR

Hi-Rel NPN bipolar transistor 40 V, 0.8 A

Datasheet — production data

Features

BV_CEO

40 V

I_C(max)

0.8 A

> 100

H_FEat 10 V - 150 m

Operating temperature range

- 65 °C to + 200 °C

■ Hi-Rel NPN bipolar transistor

■ Linear gain characteristics

■ ESCC qualified

TO-39

■ European preferred part list - EPPL

■ Radiation level: lot specific total dose contact

marketing for specified level

Figure 1.

Internal schematic diagram

Description

The 2N2219AHR is a silicon planar epitaxial NPN

transistor in a TO-39 package. It is specifically

designed for aerospace Hi-Rel applications, and

ESCC qualified in accordance with the 5201-003

specification. In case of discrepancies between

this datasheet and ESCC detailed specification,

the latter prevails.

Table 1.

Device summary

Order codes

Package

Lead finish

Marking

Type

EPPL

Packaging

520100301

520100302

Gold

Solder Dip

2N2219AHR

TO-39

ESCC Flight

Yes

Strip pack

Engineering

model

2N2219AT1

TO-39

Gold

2N2219AT1

Strip pack

October 2012

Doc ID 15294 Rev 3

1/9

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...9

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