品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
1页 | 35K | |
描述 | ||
SILICON CONTROLLED RECTIFIER,500V V(DRM),10A I(T),TO-208AA |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.68 |
最大直流栅极触发电流: | 100 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 200 mA | 最大漏电流: | 1 mA |
通态非重复峰值电流: | 125 A | 最大通态电流: | 10000 A |
最高工作温度: | 100 °C | 最低工作温度: | -40 °C |
断态重复峰值电压: | 500 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N1850A | NJSEMI |
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SCR, V (DEM) = 500 V TO 599.9V | |
2N1850A | STMICROELECTRONICS |
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SILICON CONTROLLED RECTIFIER,500V V(DRM),10A I(T),TO-208AA | |
2N1850A | POWEREX |
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Silicon Controlled Rectifier, 10000mA I(T), 500V V(DRM) | |
2N1850A | DIGITRON |
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Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 500; Max TMS Bridge Inp | |
2N1850B | TI |
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2N1850B | |
2N1853 | ETC |
获取价格 |
GERMANIUM PNP TRANSISTORS | |
2N1854 | ETC |
获取价格 |
GERMANIUM PNP TRANSISTORS | |
2N1867 | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 35V V(BR)CEO, 1-Element, PNP, Germanium, TO-9 | |
2N186A | ETC |
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TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 200MA I(C) | CAN | |
2N187 | ETC |
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alloy-junction germanium transistors |