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2N1873AS-PBF

更新时间： 2024-12-01 14:46:55
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Silicon Controlled Rectifier

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2N1873AS-PBF 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.69Is Samacsys：N
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SCRBase Number Matches：1

2N1873AS-PBF 数据手册

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2N1870AS-2N1874AS  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Ratings  
Symbol  
VDRM  
2N1870AS  
2N1871AS  
2N1872AS  
100  
2N1873AS  
150  
2N1874AS  
200  
Unit  
V
Repetitive peak off state voltage  
Repetitive peak reverse voltage  
30  
30  
60  
60  
VRRM  
100  
150  
200  
V
DC on state current  
100°C ambient  
100°C case  
IT  
250  
1.25  
mA  
A
Repetitive peak on state current  
ITRM  
ITSM  
Up to 30  
A
Peak one cycle surge (non-repetitive) on  
state current  
15  
A
Peak gate current  
IGM  
IG(AV)  
VGR  
250  
mA  
mA  
V
Average gate current  
25  
Reverse gate voltage  
5
20  
Thermal resistance, junction to case  
Operating and storage temperature range  
RӨJC  
°C/W  
°C  
TJ, Tstg  
-65 to 150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Test  
Symbol  
Min.  
Typ.  
Max.  
Units  
Test Conditions  
25°C tests  
Off-state current  
Reverse current  
Gate trigger voltage  
Gate trigger current  
On-state voltage  
IDRM  
IRRM  
VGT  
-
-
0.5  
0.5  
0.55  
30  
1.8  
-
10  
10  
0.8  
200  
2.5  
-
µA  
µA  
V
RGK = 1K, VDRM = +rating  
RGK = 1K, VRRM = - rating  
RGS = 100ohms, VD = 5V  
RGS > 10K ohms, VD = 5V  
ITM = 2A (pulse test)  
0.4  
-
IGT  
µA  
V
VTM  
dvc/dt  
IGR  
-
Off-state voltage – critical rate of rise  
Reverse gate current  
100  
-
V/µs  
µA  
mA  
Specified test circuit  
VGRM = 5V, anode open  
IG = -150µA, VD = 5V  
0.5  
-
10  
5.0  
Holding current  
IH  
0.3  
125°C tests  
High temperature off state current  
High temperature reverse current  
High temperature gate non-trigger voltage  
High temperature holding current  
-65 °C tests  
IDRM  
IRRM  
VGD  
IH  
-
15  
15  
-
100  
µA  
µA  
V
RGK = 1K, VDRM = + rating  
RGK = 1K, VRRM = - rating  
RGS = 100 ohms, VD = 5V  
IG = -150µA, VD = 5V  
-
100  
0.2  
0.2  
-
-
-
mA  
Low temperature gate trigger voltage  
Low temperature gate trigger current  
Low temperature holding current  
VGT  
IGT  
IH  
-
-
-
-
-
-
1.0  
500  
15  
V
RGK = 100 ohms, VD = 5V  
RGK > 10K ohms, VD = 5V  
IG = -150µA, VD = 5V  
µA  
mA  
Voltage ratings apply over the full operating temperature range provided the gate is connected to the cathode through a resistor, 1K or smaller, or other adequate gate bias is used.  
Rev. 20161031  
12345

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