Datasheet > 2N1870AS-PBF

2N1870AS-PBF

更新时间： 2024-12-02 09:23:03

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
5页	493K
描述
Silicon Controlled Rectifier

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中文翻译

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2N1870AS-PBF 数据手册

2N1870AS-2N1874AS

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Ratings

Symbol

V_DRM

2N1870AS

2N1871AS

2N1872AS

100

2N1873AS

150

2N1874AS

200

Unit

Repetitive peak off state voltage

Repetitive peak reverse voltage

V_RRM

100

150

200

DC on state current

100°C ambient

100°C case

I_T

250

1.25

Repetitive peak on state current

I_TRM

I_TSM

Up to 30

Peak one cycle surge (non-repetitive) on

state current

Peak gate current

I_GM

I_G(AV)

V_GR

250

Average gate current

Reverse gate voltage

Thermal resistance, junction to case

Operating and storage temperature range

R_ӨJC

°C/W

°C

T_J, T_stg

-65 to 150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Test

Symbol

Min.

Typ.

Max.

Units

Test Conditions

25°C tests

Off-state current

Reverse current

Gate trigger voltage

Gate trigger current

On-state voltage

I_DRM

I_RRM

V_GT

0.5

0.55

1.8

0.8

200

2.5

µA

R_GK= 1K, V_DRM= +rating

R_GK= 1K, V_RRM= - rating

R_GS= 100ohms, V_D= 5V

R_GS> 10K ohms, V_D= 5V

I_TM= 2A (pulse test)

0.4

I_GT

µA

V_TM

dv_c/dt

I_GR

Off-state voltage – critical rate of rise

Reverse gate current

100

V/µs

µA

Specified test circuit

V_GRM= 5V, anode open

I_G= -150µA, V_D= 5V

0.5

5.0

Holding current

I_H

0.3

125°C tests

High temperature off state current

High temperature reverse current

High temperature gate non-trigger voltage

High temperature holding current

-65 °C tests

I_DRM

I_RRM

V_GD

I_H

100

µA

R_GK= 1K, V_DRM= + rating

R_GK= 1K, V_RRM= - rating

R_GS= 100 ohms, V_D= 5V

I_G= -150µA, V_D= 5V

100

0.2

Low temperature gate trigger voltage

Low temperature gate trigger current

Low temperature holding current

V_GT

I_GT

I_H

1.0

500

R_GK= 100 ohms, V_D= 5V

R_GK> 10K ohms, V_D= 5V

I_G= -150µA, V_D= 5V

µA

Voltage ratings apply over the full operating temperature range provided the gate is connected to the cathode through a resistor, 1K or smaller, or other adequate gate bias is used.

Rev. 20161031

12 3 4 5

中文翻译

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与2N1870AS-PBF相关器件

型号	品牌	获取价格	描述	数据表
2N1870E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 1.9625A I(T)RMS, 30V V(RRM), 1 Element, TO-9, 3 PIN
2N1871	MICROSEMI	获取价格	SCRs 1.25 Amp, Planear
2N1871A	MICROSEMI	获取价格	SCRs 1.25 Amp, Planear
2N1871A	NJSEMI	获取价格	SCR, V (DRM) = 50 V TO 99.9 V
2N1871AE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 1.9625A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-9
2N1871E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 1.9625A I(T)RMS, 60V V(RRM), 1 Element, TO-9, 3 PIN
2N1872	ETC	获取价格	Silicon Controlled Rectifier
2N1872A	MICROSEMI	获取价格	SCRs 1.25 Amp, Planear
2N1872AE3	MICROSEMI	获取价格	Silicon Controlled Rectifier, 1.9625A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-9
2N1872AS-PBF	DIGITRON	获取价格	Silicon Controlled Rectifier

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