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2N1876 PDF预览

2N1876

更新时间： 2024-12-02 01:07:35
品牌 Logo 应用领域
DIGITRON 栅栅极
页数 文件大小 规格书
2页 170K
描述
1.25 AMP SILICON CONTROLLED RECTIFIER

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中文翻译

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2N1876 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.77
Base Number Matches：1

2N1876 数据手册

 浏览型号2N1876的Datasheet PDF文件第2页 
D I G I T R O N S E M I C O N D U C T O R S  
2N1875-2N1880  
1.25 AMP SILICON CONTROLLED RECTIFIER  
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
MAXIMUM RATINGS  
Rating  
Symbol 2N1875  
2N1876  
30  
2N1877  
60  
2N1878  
100  
2N1879  
150  
2N1880  
200  
Unit  
V
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
VDRM  
VRRM  
15  
15  
30  
60  
100  
150  
200  
V
DC on-state current  
100°C ambient  
100°C case  
IT  
250  
mA  
A
1.25  
Repetitive peak on-state current  
ITRM  
ITSM  
Up to 30  
A
Peak one cycle surge (non-repetitive)  
on-state current  
15  
A
Peak gate current  
IGM  
IG(AV)  
VGR  
250  
25  
5
mA  
mA  
V
Average gate current  
Reverse gate voltage  
Thermal resistance, junction to case  
RӨJC  
20  
°C/W  
Operating and storage temperature  
range  
TJ, Tstg  
-65 to 150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
Characteristics  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Subgroup 2 (25°C test)  
Off-state current  
Reverse current  
IDRM  
IRRM  
IGR  
IGT  
VGT  
IAT  
-
-
0.5  
0.5  
0.5  
5
5
10  
10  
20  
0.60  
-
µA  
µA  
µA  
µA  
V
VDRM = rating, RGK = 1KΩ  
VRRM = rating  
Reverse gate current  
Gate trigger current  
Gate trigger voltage  
Anode trigger current  
On-state voltage  
-
VGR = 2V  
-
VD = 5V, RGS = 10KΩ  
VD = 5V, RGS = 100Ω  
VD = 5V  
0.44  
-
0.52  
100  
1.8  
1.0  
(1)  
µA  
V
VT  
0.8  
0.3  
2.5  
3
IT = 2A(pulse test)  
IG = -150µA, VAA = 5V  
Holding current  
IH  
mA  
Subgroup 3 (25°C test)  
Turn-on time  
ton  
toff  
-
-
-
0.1  
0.5  
0.5  
-
-
-
µs  
µs  
µs  
IG = 20mA, IT = 0.5A,  
VD = 30V  
Turn-off time  
Gate trigger – on pulse width  
tpg(on)  
IT = 0.5A, IR = 0.5A,  
Circuit commutated turn-off time  
tq  
-
10  
-
µs  
RGK = 1KΩ  
Subgroup 4 (125°C test)  
High temperature off-state current  
IDRM  
IRRM  
-
-
5
20  
µA  
µA  
VD = rating, RGK = 1KΩ  
High temperature reverse current  
15  
100  
VRRM = rating  
Note 1: For a maximum limit of 50µA, use suffix “-1” and drop 2N.  
Voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.  
phone +1.908.245-7200  
fax +1.908.245-0555  
sales@digitroncorp.com  
www.digitroncorp.com  
144 Market Street  
Kenilworth NJ 07033 USA  
Rev. 20130116  
12

中文翻译

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